IC Delayer
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IC delayer technology is widely employed in failure analysis and reverse engineering. A failure, such as local burnout, can be exposed for detection through layer-by-layer removal. Delayering is able to systematically expose each IC layer for structure inspection.
Reverse Engineering Analysis
- Ordinary Cu, Al metallic layer delayer
- Gate oxide pinhole (with SEM or TEM analysis)
- FinFET process
What Nishka Research can do for you?
Reverse analysis by delayering metal layer with proprietary techniques (dry/wet) etching and polishing, zoom in using optical microscope (100x ~ 1500x) or sophisticated instruments like Scanning electron microscope or Transmission electron microscope for greater magnification to identify metal leakage or burn out, metal short among other errors.
SEM/TEM
- Smaller process or micro error inspection
- 3D substrate review over FinFET process
EDS / EDX / EDAX for elemental analysis
Why ChooseNishka Research
- Total quality assurance across all your processes
- Reduction of costs
- Minimization of safety and security risks
- Reliable testing for faster regulatory approvals of your products
- Ensuring the highest social accountability standards
Looking for a trusted partner to achieve your research goals? schedule a meeting with us, send us a request, or call us at +91 78427 98518 to learn more about our services and how we can support you.
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